Freescale Introduces its Latest RF Power Transistor for Cellular Base Stations
FREMONT, CA: Freescale Semiconductor introduces new gallium nitride (GaN) RF power transistor for cellular base stations. The device comes with high efficiency, gain and RF output power for 30W and 40W amplifiers for wireless infrastructure applications.
As part of the broad portfolio of Airfast family GaN transistors for the cellular market, the new A2G22S160-01S RF power transistor bucks the trend of using silicon in building semiconductor solutions. It rather uses gallium nitride to deliver higher power conversion efficiencies, faster switching speeds, greater power densities, and it comes with a smaller form factor. It offers superior performance in the frequency range between 1800MHZ and 2200MHZ.
“Freescale is driving the transition of GaN from niche markets to mainstream applications like cellular infrastructure,” said Paul Hart, SVP-GM, RF business, Freescale.
“The time is right to deliver GaN solutions to our extremely broad base of telecommunications customers. In addition to utilizing the A2G22S160-01S’ excellent performance, our cellular customers can look forward to leveraging Freescale’s high-volume production capability and worldwide customer support,” Hart adds.