GLOBALFOUNDRIES Launches Low Power FD-SOI Technology

By CIOReview | Tuesday, July 21, 2015
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SANTA CLARA, CA: GLOBALFOUNDRIES launches ‘22FDX’, the latest semiconductor technology designed to meet the low power requirements of the innovative connected devices deployed in mobile, networking and IoT environments.

The striking feature of the 22FDX semiconductor platform is that it consumes as less as 0.4 volts enabling ultra-low dynamic power consumption, less thermal impact and smaller end-product form-factors.

 “The 22FDX platform enables our customers to deliver differentiated products with the best balance of power, performance and cost,” says Sanjay Jha, CEO, GLOBALFOUNDRIES.

The 22FDX family of products include:

22FD-ulp: For the mainstream and low-cost smartphone market.

22FD-uhp: For networking applications with analog integration.

22FD-ull: The ultra-low leakage offering for wearables and IoT delivers the same capabilities as 22FD-ulp, while reducing leakage to as low as 1pa/um.

22FD-rfa: The RF active device back-gate feature can reduce or eliminate complex compensation circuits in the primary RF signal path. It allows RF designers to extract more of the intrinsic device Ft performance.

“FD-SOI is an ideal process technology to meet the unique always-on, low-power requirements of IoT and other power-sensitive devices worldwide”, says Jean-Marc Chery, Chief Operating Officer, STMicroelectronics.

“GLOBALFOUNDRIES’ announcement is a key milestone for enabling the next generation of low-power electronics. We are pleased to be GLOBALFOUNDRIES' strategic partner. Our ultra-thin SOI substrate is ready for high-volume manufacturing of 22FDX technology,” says Paul Boudre, CEO of Soitec.