IDT Collaborates with EPC to Develop Technology Based Gallium Nitride
SAN JOSE, CA: Integrated Device Technology that develops system-level solutions announces its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency.
With this integration the companies will be exploring integrating EPC’s eGaN technology. “GaN offers exciting opportunities to develop higher-performance, differentiated products for our customers,” says Sailesh Chittipeddi, vice president, Global Operations and chief technology officer at IDT.
The three areas in which the companies are collaborating involves Communications and computing infrastructure, wireless power, radio frequency.
GaN’s low capacitance and zero QRR coupled with the low inductance of its chip-scale package result in high efficiency at high frequency.
The highly resonant wireless power transfer standard of the Alliance for Wireless Power (A4WP) consortium protocol operates at 6.78 MHz, where the high speed, low-loss switching ability of GaN drives efficiency to the levels of wired solutions.
Additionally, the two companies will explore collaboration to create a portfolio of RF products for the communications infrastructure market.