IDT Expands RF Silicon Solutions with New Glitch-FreeTM DSAs and F2250

By CIOReview | Tuesday, June 2, 2015
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SAN JOSE, CA: Integrated Device Technology, developer of low-power, high-performance mixed-signal semiconductor solutions for the advanced communications, computing, and consumer industries has added two new Glitch-FreeTM digital step attenuators (DSAs) and F2250, a product from the family of voltage variable attenuators (VVAs) to expand its advanced RF silicon solutions.

The expanded features and products developed will meet the demands of wireless infrastructure point-to-point microwave, satellite communications systems and general purpose communication infrastructure applications. The demands are met with the help of attenuators feature wide bandwidths, low insertion loss, high linearity, pinpoints attenuation accuracy, and a wide temperature range.

In the period of most significant bit transitions, the two new additions, 6-bit F1912 and 7-bit F1956 DSAs eliminate attenuation setting overshoot from the transmit and receive paths by reducing transient glitches. This enables the customers to ease the process of software interface, and prevent damage to power amplifiers.                                            

Besides this, another addition, F2250 that enables expansion of its advanced RF silicon solution featuring a frequency range of 50 – 6000MHz help clients to choose positive or negative attenuation control with a highly linear-in-dB attenuation characteristic.

“Continuously evolving system requirements have driven the rapid expansion of IDT’s RF product portfolio. These new attenuator products offer customers a compelling upgrade path toward better linearity, higher reliability, and lower solution cost,” says Chris Stephens, general manager, RF division IDT. “These new drop-in compatible attenuators allow development engineers to exceed evolving system requirements with maximum re-use of existing printed circuit boards.”