IDT's New RF Voltage Variable Attenuators (VVA) Replaces Gallium arsenide (GaAs) devices

By CIOReview | Monday, August 24, 2015
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SAN JOSE, CA: Integrated Device Technology (IDT) expands its family by introducing two of the RF Voltage Variable Attenuators (VVA) namely F2255 and F2258 devices offering low insertion loss and high linearity. These devices ships in a compact 3 mm by 3mm 16-pin Thin Quad Flat No Leads (TQFN) package to deliver analog control for applications that require precise attenuation.

Generally, IDT manufactures high-performance and full-featured Radio Frequency (RF) mixer and gain control products in compact packages. The devices offered are ideal for 4G cellular base stations, broadband repeaters and microwave backhaul equipment.

The products offer half the insertion loss of competitive solutions that reduces RF chain path loss while their high linearity enhances system data rates. Comparatively, IP3 (third order Intercept Point) performance of IDT’s VVAs are nearly 1000 times better than the competitive Gallium arsenide (GaAs) device.

As the new devices abide to the standards and regulations, they ideally suit for base stations (2G, 3G and 4G), microwave infrastructure, public safety, portable wireless communication/data equipment and many more.

“IDT’s silicon-based RF products deliver exceptional performance compared to GaAs solutions, in this case up to a 30dB linearity improvement,” says Chris Stephens, General Manager, IDT’s RF division.

Silicon-based RF semiconductor technology used in IDT’s attenuators are capable of replacing the older GaAs-based semiconductor technology offering advantages like improved RF performance, robust ElectroStatic Discharge (ESD) protections, better Moisture Sensitivity Levels (MSL), improved thermal performance, lower current consumption and the proven reliability.