Innodisk Presents Revolutionary '16GB DDR4 DRAM' to the Embedded Systems Industry
FREMONT, CA: Innodisk, flash and DRAM provider, has upgraded the embedded and server unbuffered DRAM series with higher capacity 16GB DDR4 (Double Data Rate fourth generation) DRAM. Speaking about the launch, Samson Chang, Vice President, Embedded DRAM Business Unit of Innodisk exclaims, “16GB is the highest capacity unbuffered DDR4 module available on the market.”
Unbuffered memory storage providers like 2133MHz UDIMMs and SODIMMS with 16GB capacity is suitable for space constrained embedded systems, industrial PCs and servers. Industrial strength of the product features 30 micro-inch Gold Finger connectors, thermal sensors, and protective conformal coatings.
A proprietary 30 micro-inch Gold Finger connector is 10 times thicker than the Joint Electron Device Engineering Council (JEDEC) standard leading to extra reliability. Thermal sensors alert the system on temperature variation, preventing overheating and the additional layer of protective conformal coatings serves as a guard against many physical and chemical contaminants. Apart from these features, enhanced Error Detection and Correction capabilities are included in DDR4 with parity error detection and Cyclic Redundancy Check (CRC) methods so that the service is error-free and trustable.
The primary advantages of DDR4 over its ancestor DDR3 is its higher module density coupled with higher data transfer rate. Additionally, the former technology offers 30 percent better performance and consumes 20 percent less power making it a perfect fit for embedded industry. To prove this with experimental results, at 1.2V DDR4 uses less power than DDR3 operating at 1.35V.
With Intel Skylake being the default choice for embedded platform, Innodisk’s DDR4 can be expected to emerge as the ideal technology for next-generation embedded industry.
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