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Amidst the growing demands for efficient and low‐cost large‐scale cells, thin‐film photovoltaics have emerged as a technology capable of being an adequate substitute for the photo-absorbers currently in use which contains expensive, toxic elements, and requires elaborate optimization of the heterostructures for improving the efficiency. The synthetic methodology for high‐quality p‐type and n‐type films paves the way for the application of copper nitride (Cu3N) as an alternative absorber in thin‐film PV. By using a unique nitriding technique applicable for mass production and a computational search for appropriate doping elements, Tokyo Institute of Technology has depicted that copper nitride acts as an n-type semiconductor, with p-type conduction provided by fluorine doping.