EPC Introduces three Development Boards which Embeds eGaN FETs
EL SEGUNDO, CA: The efforts for devising an easy-to-use method to evaluate the exceptional performance of gallium nitride transistors has pushed Efficient Power Conversion Corporation (EPC) to introduce three development boards, coined as EPC9066, EPC9067, and EPC9068. The boards are configurable to a buck converter or as a ZVS class-D amplifier, and enables power system designers to launch their products for volume production rapidly.
All the three boards are able to boost efficiency during high frequency operation, up to 15 MHz due to integration of a zero reverse recovery (QRR) synchronous bootstrap rectifier augmented gate driver. A maximum output of 2.7A in the buck and ZVS class-D amplifier configurations is what the boards can produce where a lost reduction is observed across the entire current range.
The boards are designed with dimensions measuring 2’’ x 1.5”, laid out in a half-bridge configuration. 40 V, 65 V, and 100 V rated eGaN FETs are featured respectively on the boards EPC9066, EPC9067, and EPC9068.The Texas Instruments LM5113 gate driver combined with supply and bypass capacitors is integrated on each board. A synchronous FET (field-effect transistor) bootstrap circuit featuring the 100 V, 2800 mΩ EPC2038 eGaN FET has been configured on the gate driver. This in turn helps to eliminate the driver losses induced by the reverse recovery of the internal bootstrap diode. Various probe points and Kelvin measurement points are present on the boards for examining DC input and output. Furthermore, the boards feature capability to install a heat sink for high power operation.
Board’s specific performance is a result of the optimal design load voltage and resistance at which it can operate. This is in turn determined by the operating load conditions, including configuration of the development board. All the three boards are available for immediate delivery at a price of $158.13.
Original News Headline: 15 MHz Half-Bridge Development Boards Use Efficient Power Conversion’s (EPC) eGaN FETs and High Frequency Synchronous Bootstrap Topology
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